BAS125W Datasheet PDF

MAXIMUM RATINGS

VR IF IFSM Ptot Tj Tstg 1) 1) TS ≤ 25 °C Junction temperature Storage temperature Thermal Resistance Junction ambient, BAS125W RthJA RthJA RthJS RthJS K/W Junction ambient, BAS 125-04W...06W Junction - soldering point, BAS125W Junction - soldering point, BAS125-04W...06W 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Dec-20-1996 BAS 125W

ELECTRICAL CHARACTERISTICS

at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 385 530 800 150 200 nA VR = 20 V VR = 25 V Forward voltage VF 400 650 900 mV IF = 1 mA IF = 10 mA IF = 35 mA AC Characteristics Diode capacitance CT 16 1.1 pF Ω - VR = 0 V, f = 1 MHz Differential forward resistance RF IF = 5 mA, f = 10 kHz Semiconductor Group 2 Dec-20-1996 BAS 125W Forward current IF = f (TA*;TS) * Package mounted on epoxy BAS 125W 100 mA IF 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 TS TA 120 °C 150 TA ,TS Permissible Pulse Load RTHJS = f(tp) BAS 125W 10 3 Permissible Pulse Load IFmax/IFDC = f(tp) BAS 125W 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.