Siemens BAS140
Silicon Schottky Diode
MAXIMUM RATINGS
Parameter Reverse voltage Forward current Surge forward current, t ≤ 10 ms Total power dissipation TS ≤ 113 °C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 40 120 200 250 – 55 … + 125 – 55 … + 150 Unit V mA mA mW °C °C VR IF IFSM Ptot Top Tstg Rth JA Rth JS ≤ 260 ≤ 150 K/W K/W 1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 05.95 BAS 140WELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 30 V VR = 40 V Diode capacitance Value typ. max. Unit V(BR) 40 – 310 450 720 – – 3 10 2 – V mV 250 350 600 380 500 1000 µA – – 1 10 pF – 5 Ω – – – nH – VF IR CT RF LS VR = 0 V, f = 1 MHz Differential forward resistance IF = 10 mA, f = 10 kHz Series inductance Semiconductor Group 2 BAS 140W Forward curre...