Siemens BAS170W
Silicon Schottky Diode
| Part No. | BAS170W |
|---|---|
| Datasheet | BAS170W Download |
| Manufacturer |  Siemens |
| Description | Silicon Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Reverse voltage Forward current Surge forward current, t ≤ 10 ms Total Power dissipation TS ≤ 97°C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient 1) Symbol BAS 170W 70 70 100 250 -55 +150°C -55...+150°C Unit V mA mA mW °C °C VR IF IFSM Ptot Top Tstg Junction-soldering point Rth JA Rth JS ≤ 320 ≤ 210 K/W K/W _________________________________ 1) Package mounted on an epoxy pcb 40mm x 40mm x 1.5mm/1cm2 Cu Semiconductor Group 1 Edition A01, 11.07.94 BAS 170WELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 50 V V(BR) 70 375 705 880 1.5 34 2 - V mV 300 600 750 410 750 1000 µA 0.1 10 pF 2 ps 100 Ω nH - VF IR VR = 70 V Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kH...
