Siemens BAT18-05
Silicon RF Switching Diode
| Part No. | BAT18-05 |
|---|---|
| Datasheet | BAT18-05 Download |
| Manufacturer |  Siemens |
| Description | Silicon RF Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
per Diode Parameter Reverse voltage Forward current Operating and storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR IF Top Tstg Values 35 100 Unit V mA – 55 … + 150 ˚C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAT 18...ELECTRICAL CHARACTERISTICS
per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 100 mA Reverse current VR = 20 V VR = 20 V, TA = 60 ˚C Diode capacitance , f = 1 MHz VR = 20 V Forward resistance IF = 5 mA, f = 100 MHz Series inductance Symbol min. VF IR – – CT rf LS – – – – – 0.75 0.4 2 20 200 1 0.7 – pF Ω nH – Values typ. 0.38 max. 1.2 V nA Unit Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2