Siemens BAT60B
Silicon Schottky Diode
| Part No. | BAT60B |
|---|---|
| Datasheet | BAT60B Download |
| Manufacturer |  Siemens |
| Description | Silicon Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Diode reverse voltage Forward current Surge forward current (t < 100µs) Total power dissipation, T S = 28 °C Junction temperature Storage temperatureMAXIMUM RATINGS
Junction - ambient 1) Symbol Value 10 3 5 1350 150 - 55 ...+150 Unit V A mA mW °C VR IF IFSM Ptot Tj Tstg RthJA RthJS ≤ 160 ≤ 90 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 60BELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. µA 5 10 100 410 0.24 0.3 0.4 V Unit IR VR = 5 V VR = 8 V Reverse current IR - VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C Forward voltage VF I F = 10 mA I F = 100 mA I F = 1000 mA AC characteristics Diode capacitance CT - 20 - pF VR = 5 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAT 60B Forward current IF = f (TA*;TS) * Package m...
