BB640 Datasheet PDF

MAXIMUM RATINGS

Parameter Reverse voltage Reverse voltage (R ≥ 5 kΩ) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR VRM IF Top Tstg Values 30 35 20 – 55 … + 150 Unit V mA – 55 … + 150 ˚C 450 K/W Semiconductor Group 1 02.96 BB 640

ELECTRICAL CHARACTERISTICS

at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 85 ˚C Diode capacitance, f = 1 MHz VR = 1 V VR = 28 V Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1 V … 28 V, f = 1 MHz Series resistance CT = 30 pF, f = 100 MHz Series inductance Symbol min. IR – – CT 62 2.9 CT1 CT28 ∆CT Values typ. – – max. Unit nA 10 200 pF – – – – 1.15 2 76 3.4 25 2.5 – – – % Ω nH 19.5 – – – CT rs LS Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2