Siemens BC618
NPN Silicon Darlington Transistors
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 617 40 50 BC 618 55 80 12 500 800 100 200 625 150 Unit V mA mW ˚C – 65 … + 150 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC 617 BC 618ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 617 BC 618 Collector-base breakdown voltage IC = 100 µA BC 617 BC 618 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 40 V VCB = 60 V VCB = 40 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter...