Siemens BCP70M
PNP Silicon AF Power Transistor
| Part No. | BCP70M |
|---|---|
| Datasheet | BCP70M Download |
| Manufacturer |  Siemens |
| Description | PNP Silicon AF Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 94 °C Junction temperature Storage temperature Symbol Value 32 32 5 3 6 200 500 1.7 150 -65...+150 W °C mA A Unit V VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤ 88 ≤ 33 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-05-1998 1998-11-01 BCP 70MELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit max. 100 20 100 nA µA nA V min. DC Characteristics Collector-emitter breakdown voltage typ. - V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE 32 32 5 - I C = 100 µA, IB = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V,...
