Siemens BCW65
NPN Silicon AF Transistors
| Part No. | BCW65 |
|---|---|
| Datasheet | BCW65 Download |
| Manufacturer |  Siemens |
| Description | NPN Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCW 65 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 60 5 Values BCW 66 45 75 5 800 1 100 200 330 150 – 65 … + 150 Unit V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 65 BCW 66ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 Collector-base breakdown voltage IC = 10 µA BCW 65 BCW 66 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCW 65 BCW 66 BCW 65 BCW 66 IEB0 hFE 35 5...
