Siemens BCX12
NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage)
| Part No. | BCX12 |
|---|---|
| Datasheet | BCX12 Download |
| Manufacturer |  Siemens |
| Description | NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 125 125 5 800 1 100 200 625 150 – 65 … + 150 Unit V mA A mA mW ˚C 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BCX 12ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current ga...
