Siemens BFP93
NPN Silicon RF Transistor
| Part No. | BFP93 |
|---|---|
| Datasheet | BFP93 Download |
| Manufacturer |  Siemens |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 50 6 mW 300 150 - 65 ... + 150 - 65 ... + 150 ≤ 240 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 78 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFP 93AELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFP 93AELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified.
