Siemens BFS481
NPN Silicon RF Transistor
| Part No. | BFS481 |
|---|---|
| Datasheet | BFS481 Download |
| Manufacturer |  Siemens |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ... + 150 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg TS ≤ 83 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS ≤ 380 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFS 481ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFS 481ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified.
