Siemens BPX86
The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures Bezeichnung Description Symbol Symbol -A Fotostrom, λ = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-EmitterSättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3, Ee = 0.5 mW/cm2 -B Werte Value -C Einheit Unit 0.32 ... For delivery the components are marked -A, -B, -C.| Part No. | BPX86 |
|---|---|
| Datasheet | BPX86 Download |
| Manufacturer |  Siemens |
| Description | NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays |
| Buy | Stock & Price |
FEATURES
q Especially suitable for applications from 440 nm to 1070 nm q High linearität q Multiple-digit array package of transparent epoxy q Available in groupsAPPLICATIONS
q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q “Messen/Steuern/Regeln” Miniature photointerrupters Punched tape reading Industrial electronics For control and drive circuits Semiconductor Group 1 03.96 feo06367 fez06365 BPX 80 BPX 82 ... 89 Typ Type Transistoren pro Zeile Number of Transistors per Array min 2 3 4 5 6 7 8 9 10 4.5 7.0 9.6 12.1 14.6 17.2 19.7 22.3 24.8 Maße “A” Dimensions “A” max 4.9 7.4 10 12.5 15 17.6 20.1 22.7 25.2 Bestellnummer Ordering Code BPX 82 BPX 83 BPX 84 BPX 85 BPX 86 BPX 87 BPX 88 BPX 89 BPX 80 Q62702-P21 Q62702-P25 Q62702-P30 Q62702-P31 Q62702-P22 Q62702-P32 Q62702-P33 Q62702-P26 Q62702-P28 GrenzwerteMAXIMUM RATINGS
BezeichnungDESCRIPTION
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom...
