Siemens BSS79B
NPN Silicon Switching Transistors
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol BSS 79 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 40 Values BSS 81 35 75 6 800 1 100 200 330 150 Unit V mA A mA mW ˚C – 65 … + 150 Rth JA Rth JS ≤ ≤ 290 220 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BSS 79 BSS 81ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 60 V VCB = 60 V, TA = 150 ˚C Emitter-base cutoff current...