Siemens BTS112A
N-channel Enhancement mode Temperature sensor
| Part No. | BTS112A |
|---|---|
| Datasheet | BTS112A Download |
| Manufacturer |  Siemens |
| Description | N-channel Enhancement mode Temperature sensor |
| Buy | Stock & Price |
FEATURES
q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220AB Ordering Code C67078-S5014-A3MAXIMUM RATINGS
Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 20 12 2.5 48 27 400 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group 1 04.97 BTS 112AELECTRICAL CHARACTERISTICS
at Tj = 25 ˚C, unless otherwise specified.
