BUP312 Datasheet | Siemens Semiconductor Group

BUP 312 IGBT - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Avalanche rated Type BUP 312 VCE IC 1200V 12A Package TO-218 AB Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 90 °C Avalanche energy, single pulse IC = 5 A, VCC = 24 V, RGE = 25 Ω L = 3.3 m H, Tj = 25 °C Power dissipation TC = 25 °C Chip or operating temperature Storage temperature Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg Pin 1 G Pin 2 C Pin 3 E Ordering Code Q67040-A4209-A2 Values 1200 Unit V 1200 ± 20 12 8 24 16 m J 125 -55 ... + 150 -55 ... + 150 W °C Semiconductor Group Apr-08-1997 BUP 312 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol - Rth...