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BUZ100SL Datasheet PDF

Siemens BUZ100SL

Power Transistor

Part No. BUZ100SL
Datasheet BUZ100SL Download
Manufacturer
Siemens
Description Power Transistor
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BUZ100SL datasheet page 1 preview

MAXIMUM RATINGS

Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 70 50 Pulsed drain current TC = 25 °C IDpuls 280 E AS Avalanche energy, single pulse ID = 70 A, V DD = 25 V, RGS = 25 Ω L = 155 µH, Tj = 25 °C mJ 380 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 70 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 70 17 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 14 170 V W Semiconductor Group 1 30/Jan/1998 BUZ 100 SL SPP70N05L

MAXIMUM RATINGS

Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.88 ≤ 62 55 / 175 / 56 K/W

ELECTRICAL CHARACTERISTICS

, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdo...
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