BUZ101S Datasheet PDF

MAXIMUM RATINGS

Parameter Continuous drain current Symbol Values 22 16 Unit A ID TC = 25 °C TC = 100 °C Pulsed drain current IDpuls 88 TC = 25 °C Avalanche energy, single pulse EAS 90 mJ ID = 22 A, VDD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IAR EAR dv/dt 22 5.5 A mJ kV/µs IS = 22 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 55 V W TC = 25 °C Semiconductor Group 1 04/Nov/1997 Preliminary data BUZ 101 S SPP22N05

MAXIMUM RATINGS

Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 2.7 ≤ 62 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJA

ELECTRICAL CHARACTERISTICS

, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max.