Siemens BUZ104SL-4
Power Transistor
| Part No. | BUZ104SL-4 |
|---|---|
| Datasheet | BUZ104SL-4 Download |
| Manufacturer |  Siemens |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Continuous drain current one channel active Symbol Values 3.2 Unit A ID IDpuls 12.8 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 52 dv/dt 6 mJ ID = 3.2 A, VDD = 25 V, RGS = 25 Ω L = 10.15 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 3.2 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 V W TA = 25 °C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 ... + 175 -55 ... + 175 55 / 175 / 56 °C Semiconductor Group 1 07/Oct/1997 Preliminary data BUZ 104SL-4 Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. max. tbd 62.5 K/W Unit RthJS RthJA - 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel activeELECTRICAL CHARACTERISTICS
, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
