BUZ10L Datasheet PDF

MAXIMUM RATINGS

Parameter Continuous drain current Symbol Values 23 Unit A ID IDpuls 92 TC = 26 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 23 1.3 mJ ID = 23 A, VDD = 25 V, RGS = 25 Ω L = 15.1 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 8 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 75 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.67 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 10 L Not for new design

ELECTRICAL CHARACTERISTICS

, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 10 10 0.06 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate thr...