BUZ110S Datasheet PDF

MAXIMUM RATINGS

Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 80 66 Pulsed drain current TC = 25 °C IDpuls 320 E AS Avalanche energy, single pulse ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 144 µH, Tj = 25 °C mJ 460 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 80 20 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 200 V W Semiconductor Group 1 28/Jan/1998 BUZ 110 S SPP80N05

MAXIMUM RATINGS

Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.75 ≤ 62 55 / 175 / 56 K/W

ELECTRICAL CHARACTERISTICS

, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown...