BUZ12 Datasheet PDF

MAXIMUM RATINGS

Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 65 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 42 2.5 mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 23.2 µH, Tj = 25 °C Gate source voltage Power dissipation 41 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤1 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ 12 Not for new design

ELECTRICAL CHARACTERISTICS

, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.024 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Ze...