Siemens BUZ173
Power Transistor
| Part No. | BUZ173 |
|---|---|
| Datasheet | BUZ173 Download |
| Manufacturer |  Siemens |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Continuous drain current TC = 30 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse ID = -3.6 A, VDD = -25 V, RGS = 25 Ω L = 23 mH, Tj = 25 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Package TO-220 AB Symbol ID IDpuls EAS VGS Ptot Tj Tstg RthJC RthJA Ordering Code C67078-S1452-A2 Values Unit A -3.6 -14 mJ 200 ± 20 V W 40 -55 ... + 150 °C -55 ... + 150 ≤ 3.1 K/W ≤ 75 E 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 173ELECTRICAL CHARACTERISTICS
, at Tj = 25°C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = -200 V, VGS = 0 V, Tj = 25 °C VDS = -200 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-Source on-resistance VGS = -10 V, ID = -2.3 A Symbol min.
