Siemens BUZ271
Power Transistor
| Part No. | BUZ271 |
|---|---|
| Datasheet | BUZ271 Download |
| Manufacturer |  Siemens |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Continuous drain current Symbol Values 13 Unit A ID IDpuls 52 TC = 31 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13 9 mJ ID = 13 A, VDD = 50 V, RGS = 25 Ω L = 1.89 mH, Tj = 25 °C Gate source voltage Power dissipation 200 VGS Ptot ± 20 95 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.32 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 255 Not for new designELECTRICAL CHARACTERISTICS
, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 250 3 0.1 10 10 0.22 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Ze...
