BUZ307 Datasheet PDF

MAXIMUM RATINGS

Parameter Continuous drain current Symbol Values 3 Unit A ID IDpuls 12 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 8 mJ ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 66.6 mH, Tj = 25 °C Gate source voltage Power dissipation 320 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 / 150 / 56 °C K/W Semiconductor Group 09/96 BUZ 307

ELECTRICAL CHARACTERISTICS

, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 800 3 0.1 10 10 2.7 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain c...