Siemens BUZ310
Power Transistor
| Part No. | BUZ310 |
|---|---|
| Datasheet | BUZ310 Download |
| Manufacturer |  Siemens |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 2.5 TC = 25 °C Pulsed drain current IDpuls 10 TC = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 78 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.6 75 C 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 310ELECTRICAL CHARACTERISTICS
, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 1000 3 20 100 10 4.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 250 1000 µA VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C Gate-source...
