Siemens BUZ332
Power Transistor
| Part No. | BUZ332 |
|---|---|
| Datasheet | BUZ332 Download |
| Manufacturer |  Siemens |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Continuous drain current Symbol Values 8.5 Unit A ID IDpuls 34 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 8 13 mJ ID = 8 A, VDD = 50 V, RGS = 25 Ω L = 16.3 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 0.83 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 332 Not for new designELECTRICAL CHARACTERISTICS
, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 600 3 0.1 10 10 0.7 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Ze...
