CFY30 Datasheet PDF

GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet * Low noise ( Fmin = 1.4 dB @ 4 GHz ) * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Pin Configuration 1 2 3 4 Package 1) CFY 30 A2 Q62703-F97 S D S G SOT-143 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 70°C) 2) Thermal resistance Channel-soldering point 2) Symbol Value 5 7 -4 ... +0.5 80 150 -40...+150 250 Unit V V V mA °C °C mW VDS VDG VGS ID TCh Tstg Ptot RthChS <320 K/W 1) Dimensions see chapter Package Outlines 2) TS is measured on the source 1 lead at the soldering point to the PCB.