CGY21 Datasheet PDF

MAXIMUM RATINGS

Parameter Supply voltage, TC ≤ 80 ˚C Total power dissipation, TC ≤ 50 ˚C Channel temperature Storage temperature range Thermal Resistance Channel - case RthchC 50 K/W Symbol VS Ptot Tch Tstg Values 6 2 150 – 55 … + 150 Unit V W ˚C Note: Exceeding any of the maximum ratings may cause permanent damage to the device. Appropriate handling procedures are required to protect the electrostatic sensitive IC against degradation due to excess voltage or excess current spikes. Excellent ground connection of lead 4 and the package (e. g. soldered on microstripline laminate) is required to achieve guaranteed RF performance and stable operation conditions and provides adequate heat sink. Low parasitic capacitance of the bias network to port 2 gives optimum gain and flatness. Input and output connections must be DC isolated by coupling capacitors. Semiconductor Group 2 CGY 21

ELECTRICAL CHARACTERISTICS

at TA = 25 ˚C, VS = 4.5 V, RS = RL = 50 Ω, unless otherwise specified, (for application circuit see next page).