Siemens HYB3116405BJ-60
The HYB3116405BTL parts have a very low power „sleep mode“ supported by Self Refresh.3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information
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● 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns
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● Single + 3.3 V (± 0.3V ) supply Low power dissipation max. 396 active mW (HYB3117405BJ/BT-50) max. 363 active mW (HYB3117405BJ/BT-60) max. 330 active mW (HYB3117405BJ/BT-70) max. 360 active mW (HYB3116405BJ/BT-50) max. 324 active mW (HYB3116405BJ/BT-60) max. 288 active mW (HYB3116405BJ/BT-70) 7.2 mW standby (LV-TTL) 3.6 mW standby (LV-CMOS) 720 µW standby for L-version Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, Self Refresh and test mode Hyper page mod...
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● 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns
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● Single + 3.3 V (± 0.3V ) supply Low power dissipation max. 396 active mW (HYB3117405BJ/BT-50) max. 363 active mW (HYB3117405BJ/BT-60) max. 330 active mW (HYB3117405BJ/BT-70) max. 360 active mW (HYB3116405BJ/BT-50) max. 324 active mW (HYB3116405BJ/BT-60) max. 288 active mW (HYB3116405BJ/BT-70) 7.2 mW standby (LV-TTL) 3.6 mW standby (LV-CMOS) 720 µW standby for L-version Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, Self Refresh and test mode Hyper page mod...