Siemens HYB314175BJ-50
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
| Part No. | HYB314175BJ-50 |
|---|---|
| Datasheet | HYB314175BJ-50 Download |
| Manufacturer |  Siemens |
| Description | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| Buy | Stock & Price |
DESCRIPTION
3.3 V 50 ns 256 Kx16 EDO-DRAM 3.3 V 55 ns 256 Kx16 EDO-DRAM 3.3 V 60 ns 256 Kx16 EDO-DRAM 3.3 V 50 ns 256 Kx16 EDO- DRAM 3.3 V 55 ns 256 Kx16 EDO- DRAM 3.3 V 60 ns 256 Kx16 EDO-DRAM Pin Names A0-A8 RAS UCAS, LCAS WE OE I/O1 – I/O16 Address Inputs Row Address Strobe Column Address Strobe Read/Write Input Output Enable Data Input/Output Power Supply (+ 3.3 V) Ground (0 V) No Connection VCC VSS N.C. Semiconductor Group 2 HYB 314175BJ/BJL-50/-55/-60 3.3V 256K x 16 EDO-DRAM Pin Configuration (top view) P-SOJ-40-1 Semiconductor Group 3 HYB 314175BJ/BJL-50/-55/-60 3.3V 256K x 16 EDO-DRAM Block Diagram Semiconductor Group 4 HYB 314175BJ/BJL-50/-55/-60 3.3V 256K x 16 EDO-DRAMABSOLUTE MAXIMUM RATINGS
Operating temperature range ........................................................................................ 0 to + 70 °C Storage temperature range..................................................................................... – 55 to + 150 °C Input/output voltage ..................................................................................... – 1 to (VCC + 0.5, 4.6) V Power supply voltage..........................
