Siemens HYB3165805AT-50
The HYB3164(5)805A operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)805ATL parts have a very low power „sleep mode“ supported by Self Refresh.| Part No. | HYB3165805AT-50 |
|---|---|
| Datasheet | HYB3165805AT-50 Download |
| Manufacturer |  Siemens |
| Description | 8M x 8-Bit Dynamic RAM |
| Buy | Stock & Price |
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) HYB 3164805AJ/AT(L) -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 Advanced Information
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● 8 388 608 words by 8-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns
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● Single + 3.3 V (± 0.3V) power supply Low power dissipation: max. 450 active mW ( HYB 3164805AJ/AT(L)-40) max. 360 active mW ( HYB 3164805AJ/AT(L)-50) max. 324 active mW ( HYB 3164805AJ/AT(L)-60) max. 612 active mW ( HYB 3165805AJ/AT(L)-40) max. 468 active mW ( HYB 3165805AJ/AT(L)-50) max. 432 active mW ( HYB 3165805AJ/AT(L)-60) 7.2 mW standby (LVTTL) 3.24 mW standby (LVMOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh
● Self refresh (L-vers...
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● 8 388 608 words by 8-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns
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● Single + 3.3 V (± 0.3V) power supply Low power dissipation: max. 450 active mW ( HYB 3164805AJ/AT(L)-40) max. 360 active mW ( HYB 3164805AJ/AT(L)-50) max. 324 active mW ( HYB 3164805AJ/AT(L)-60) max. 612 active mW ( HYB 3165805AJ/AT(L)-40) max. 468 active mW ( HYB 3165805AJ/AT(L)-50) max. 432 active mW ( HYB 3165805AJ/AT(L)-60) 7.2 mW standby (LVTTL) 3.24 mW standby (LVMOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh
● Self refresh (L-vers...
