HYB511000BJL-70 Datasheet | Siemens Semiconductor Group

Description DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group HYB 511000BJ/BJL-50/-60/-70 1 M × 1-DRAM The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by 1-bit. The HYB 511000BJ/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 511000BJ/BJL to be packaged in a standard plastic P-SOJ-26/20. This package size provides high system bit densities and is patible with monly used automatic testing and insertion equipment. System oriented features include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for low power battery...