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HYB5116400BT-50 - 4M x 4-Bit Dynamic RAM

General Description

N.C.

Key Features

  • include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116400BJ-50 HYB 5116400BJ-60 HYB 5116400BJ-70 HYB 5116400BT-50 HYB 5116400BT-60 HYB 5116400BT-70 Pin Names A0-A11 A0-A9 RAS OE I/O1-I/O4 CAS WE Row Address Inputs Column Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) not connected Ordering Code Q67.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB5116400BT-60 4M x 4-Bit Dynamic RAM
HYB5116400BT-70 4M x 4-Bit Dynamic RAM
HYB5116400BJ-50 4M x 4-Bit Dynamic RAM
HYB5116400BJ-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116400BJ-70 4M x 4-Bit Dynamic RAM
HYB5116405BJ-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BT-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BT-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4M x 4-Bit Dynamic RAM HYB5116400BJ -50/-60/-70 HYB5116400BT -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns • • Single + 5 V (± 10 %) supply Low power dissipation max. 550 active mW (-50 version) max. 495 active mW (-60 version) max. 440 active mW (-70 version) 11 mW standby (TTL) 5.5.