• Part: HYB5116405BJ-50
  • Description: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
  • Manufacturer: Siemens Semiconductor Group
  • Size: 143.75 KB
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Siemens Semiconductor Group
HYB5116405BJ-50
4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) Advanced Information - 4 194 304 words by 4-bit organization - 0 to 70 °C operating temperature - Hyper Page Mode - EDO - operation - Performance: -50 HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 -60 60 15 30 25 ns ns ns ns t RAC RAS access time t CAC CAS access time t AA t RC Access time from address Read/Write cycle time 50 13 25 84 20 104 ns t HPC Hyper page mode (EDO) cycle time - Power dissipation, refresh & addressing: HYB 5116405 HYB 3116405 HYB 5117405 HYB 3117405 -50 Power supply Addressing Refresh L-version Active TTL Standby CMOS Standby CMOS Standby (L-version) 275 11 5.5 - -60 -50 -60 -50 -60 -50 -60 5 V ± 10% 12/10 3.3 V ± 0.3 V 12/10 5 V ± 10% 11/11 - 440 11 5.5 - 385 288 7.2 3.6 - 252 m W m W m W m W 3.3 V ± 0.3 V 11/11 4096 cylces / 64 ms 4096 cycles / 128 ms 220 180 7.2 3.6 0.72 144 2048 cycles / 32 ms - Read, write, read-modify-write, CAS-before-RAS...