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HYB5116405BT-60 - 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

General Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns)

Key Features

  • include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116405BJ-50 HYB 5116405BJ-60 HYB 5116405BJ-70 HYB 5116405BT-50 HYB 5116405BT-60 HYB 5116405BT-70 HYB 5117405BJ-50 HYB 5117405BJ-60 HYB 5117405BJ-70 HYB 5117405BT-50 HYB 5117405BT-60 HYB 5117405BT-70 Pin Names A0-A11 A0-A9 A0-A10 RAS OE I/O1-I/O4 CAS WE Row Address Inputs for HYB5116405 Column Address Inputs for HYB5116405 Row and Column A.

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More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB5116405BT-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BT-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116400BJ-50 4M x 4-Bit Dynamic RAM
HYB5116400BJ-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116400BJ-70 4M x 4-Bit Dynamic RAM
HYB5116400BT-50 4M x 4-Bit Dynamic RAM
HYB5116400BT-60 4M x 4-Bit Dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 • • • -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns • • • • • • • • • Single + 5 V (± 10 %) supply Low power dissipation max. 550 mW active (HYB5116405BJ/BT-50) max. 495 mW active (HYB5116405BJ/BT-60) max. 440 mW active (HYB5116405BJ/BT-70) max. 660 mW active (HYB5117405BJ/BT-50) max. 605 mW active (HYB5117405BJ/BT-60) max. 550 mW active (HYB5117405BJ/BT-70) 11 mW standby (TTL) 5.5.