HYB5117400BJ-60
4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)
Advanced Information
- 4 194 304 words by 4-bit organization
- 0 to 70 °C operating temperature
- Fast Page Mode operation
- Performance: -50 -60 60 15 30 40 ns ns ns ns
HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 t RAC RAS access time t CAC CAS access time t AA t RC t PC
Access time from address Read/Write cycle time Fast page mode cycle time
50 13 25 84 35
104 ns
- Power Dissipation, Refresh & Addressing: HYB 5116400 -50 Power Supply Addressing Refresh Active TTL Standby CMOS Standby 275 11 5.5 -60 5 V ± 10% 12/10 220 HYB 3116400 -50 -60 3.3 V ± 0.3 V 12/10 180 7.2 3.6 144 HYB 5117400 -50 -60 5 V ± 10% 11/11 440 11 5.5 385 HYB 3117400 -50 -60 3.3 V ± 0.3 V 11/11 288 7.2 3.6 252 m W m W m W
4096 cycles / 64 ms
2048 cycles / 32 ms
- Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode
- All inputs, outputs and clocks fully TTL (5 V...
