HYB5117800BSJ-60
2M × 8
- Bit Dynamic RAM 2k Refresh (Fast Page Mode)
Advanced Information
- 2 097 152 words by 8-bit organization
- 0 to 70 °C operating temperature
- Fast Page Mode operation
- Performance: -50 -60 60 15 30 104 40 ns ns ns ns ns
HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 t RAC t CAC t AA t RC t PC
RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time
50 13 25 84 35
- Power dissipation: HYB5117800 -50 Power Supply Active TTL Standby CMOS Standby 440 -60 5 ± 10% 385 11 5.5 HYB3117800 -50 288 -60 3.3 ± 0.3 V 252 7.2 3.6 m W m W m W
- Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode
- All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-patible
- 2048 refresh cycles / 32 ms (2k-refresh)
- Plastic Package: P-SOJ-28-3 400 mil
Semiconductor Group
1998-10-01
HYB 5(3)117800/BSJ-50/-60 2M × 8 DRAM
The HYB 5(3)117800 are 16 MBit dynamic RAMs based on the...
