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HYB5117800BSJ-60 - 2M x 8-Bit Dynamic RAM

General Description

V CC I/O1 I/O2 I/O3 I/O4 WE RAS N.C.

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Full PDF Text Transcription for HYB5117800BSJ-60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYB5117800BSJ-60. For precise diagrams, and layout, please refer to the original PDF.

2M × 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode) Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode oper...

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organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 60 15 30 104 40 ns ns ns ns ns HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 84 35 • Power dissipation: HYB5117800 -50 Power Supply Active TTL Standby CMOS Standby 440 -60 5 ± 10% 385 11 5.5 HYB3117800 -50 288 -60 3.3 ± 0.3 V 252 7.2 3.6 mW mW mW • Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode • All inputs, outputs and clocks fully TTL (

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