HYB5117805BSJ-60
2M × 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
Advanced Information
- 2 097 152 words by 8-bit organization
- 0 to 70 °C operating temperature
- Hyper Page Mode-EDO-operation
- Performance: -50 -60 60 15 30 104 25
HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 t RAC t CAC t AA t RC t HPC
RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time
50 13 25 84 20 ns ns ns ns ns
- Power dissipation: HYB 5117805 -50 Power Supply Active TTL Standby CMOS Standby 440 11 5.5 -60 385 5 ± 10% HYB 3117805 -50 288 7.2 3.6 -60 252 m W m W m W 3.3 ± 0.3 V
- Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode
- All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-patible
- 2048 refresh cycles / 32 ms (2k-refresh)
- Plastic Package: P-SOJ-28-3 400 mil
Semiconductor Group
1998-10-01
HYB 5(3)117805/BSJ-50/-60 2M × 8 EDO-DRAM
The HYB 5(3)117805 are 16 MBit...
