HYB5118160BSJ-60
1M × 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode)
Advanced Information
- 1 048 576 words by 16-bit organization
- 0 to 70 °C operating temperature
- Fast Page Mode operation
- Performance: -50 -60 60 15 30 104 40 ns ns ns ns ns
HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 t RAC t CAC t AA t RC t PC
RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time
50 13 25 84 35
- Power Dissipation, Refresh & Addressing: HYB5118160 -50 Power Supply Addressing Refresh Active TTL Standby CMOS Standby 715 11 5.5 -60 5 V ± 10 % 10/10 632 HYB3118160 -50 -60 3.3 V ± 0.3 V 10/10 468 7.2 3.6 414 m W m W m W
1024 cycles / 16 ms
- Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
- All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-patible
- Plastic Package: P-SOJ-42-1 400 mil
Semiconductor Group
1998-10-01
HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 1M × 16 DRAM
The HYB...
