HYB5118165BST-60
1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
Advanced Information
- 1 048 576 words by 16-bit organization
- 0 to 70 °C operating temperature
- Hyper Page Mode-EDO-operation
- Performance: -50 -60 60 15 30
HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 t RAC RAS access time t CAC CAS access time t AA t RC
Access time from address Read/Write cycle time
50 13 25 84 20 ns ns ns ns ns
104 25 t HPC Hyper page mode (EDO) cycle time
- Power Dissipation, Refresh & Addressing: HYB5118165 -50 Power Supply Addressing Refresh Active TTL Standby CMOS Standby 715 11 5.5 10/10 632 -60 5 V ± 10 %
HYB3118165 -50 10/10 468 7.2 3.6 414 m W m W m W -60 3.3 V ± 0.3 V
1024 cycles / 16 ms
- Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
- All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-patible
- Plastic Package: P-SOJ-42-1 400 mil P-TSOPII-50/44-1 400 mil
Semiconductor Group
1998-10-01
HYB 5118165BSJ/BST-5...
