HYB514100BJ-50 Description
660 mW active (-50 version) max. 605 mW active (-60 version) Standby power dissipation: standby (TTL) 5.5 mW max.
- Part: HYB514100BJ-50
- Manufacturer: Siemens Semiconductor Group
- Size: 108.65 KB
Related Siemens Semiconductor Group Datasheets
| Part Number | Description |
|---|---|
| HYB514100BJ-60 | 4M x 1-Bit Dynamic RAM |
| HYB514171BJ-50 | 256k x 16-Bit Dynamic RAM |
| HYB514171BJ-60 | 256k x 16-Bit Dynamic RAM |
| HYB514175BJ-50 | 256k x 16-Bit EDO-DRAM |
| HYB514175BJ-55 | 256k x 16-Bit EDO-DRAM |