HYB514100BJ-60 datasheet PDF for 4M x 1-Bit Dynamic RAM.
| Part number | HYB514100BJ-60 |
|---|---|
| Datasheet | HYB514100BJ-60_SiemensSemiconductorGroup.pdf |
| File Size | 108.65 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | 4M x 1-Bit Dynamic RAM |
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660 mW active (-50 version) max. 605 mW active (-60 version) Standby power dissipation: standby (TTL) 5.5 mW max.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| HYB514100BJ-50 | 4M x 1-Bit Dynamic RAM |
| HYB514171BJ-50 | 256k x 16-Bit Dynamic RAM |
| HYB514171BJ-60 | 256k x 16-Bit Dynamic RAM |
| HYB514175BJ-50 | 256k x 16-Bit EDO-DRAM |
| HYB514175BJ-55 | 256k x 16-Bit EDO-DRAM |
| HYB514175BJ-60 | 256k x 16-Bit EDO-DRAM |
| HYB514256B | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256BJ-50 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256BJ-60 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256BJ-70 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
