HYB514256BJ-70 Datasheet | Siemens Semiconductor Group

Description DRAM (access time 50ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 256 K × 4-DRAM The HYB 514256B/BJ/BL/BJL is the new generation dynamic RAM organized as 262 144 words by 4-bit. The HYB 514256B/BJ/BL/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 514256B/BJ/BL/BJL to be packaged in a standard plastic P-DIP-20-2,or plastic P-SOJ-26/20-1. This package size provides high system bit densities and is patible with monly used automatic testing and insertion equipment. System oriented features include single + 5 V (± 10 %) power...