DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns)
Semiconductor Group
541
09.94
HYM 321160S/GS-60/-70 1M x 32-Bit
The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by 32-bit in a 72-pin
Full PDF Text Transcription for HYM321160S (Reference)
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1M x 32-Bit Dynamic RAM Module (2M x 16-Bit Dynamic RAM Module) HYM 321160S/GS-60/-70 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152...
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mation • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 4840 mW active (-60 version) max.
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