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HYM322160GS-60 - 2M x 32-Bit Dynamic RAM Module

General Description

DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) Semiconductor Group 551 09.94 HYM 322160S/GS-60/-70 2M x 32-Bit The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32-Bit in a 72-pin si

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Full PDF Text Transcription for HYM322160GS-60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYM322160GS-60. For precise diagrams, and layout, please refer to the original PDF.

2M x 32-Bit Dynamic RAM Module HYM 322160S/GS-60/-70 Advanced Information • 2 097 152 words by 32-Bit organization (alternative 4 194 304 words by 16-Bit) Fast access and...

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t organization (alternative 4 194 304 words by 16-Bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 4840 mW active (-60 version) max. 4400 mW active (-70 version) CMOS – 88 mW standby TTL – 176 mW standby • • CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin double-sided Single in-Line Mem

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