HYM322160GS-60 Datasheet | Siemens Semiconductor Group

Description DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) Semiconductor Group HYM 322160S/GS-60/-70 2M x 32-Bit The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32-Bit in a 72-pin single-in-line package prising sixteen HYB514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC board. The HYM322160S/GS-60/-70 can also be used as a 4 194 304 words by 16-Bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and DQ31, respectively. Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins....