HYM324000GD-
4M × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
HYM 324000GD-50/-60
Preliminary Information
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4 0194 034 words by 32-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3 V (± 0.3 V) supply Low power dissipation max. 1008 m W active (-50 version) max. 864 m W active (-60 version) LVCMOS
- 1.8 m W standby TTL
- 14.4 m W standby
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CAS-before-RAS refresh, RAS-only-refresh. Self Refresh 2 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL patible 72 pin, dual read-out, one bank, Small Outline DIMM Module Utilizes two 4M × 16 -DRAMs (HYB 3165160T) 4096 refresh cycles / 64 ms Gold contact pad
Semiconductor Group
HYM324000GD-50/-60 4M x 32 SO-DIMM
The HYM 324000GD -50/-60 is a 16 MByte DRAM module organized as 4 194 304...
