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HYM324025GS-60 - 4M x 32-Bit EDO-DRAM Module

General Description

VSS DQ16 DQ17 DQ18 DQ19 N.C.

Key Features

  • specified current load and 100 pF at Vol = 0.8 V and Voh = 2.

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Full PDF Text Transcription for HYM324025GS-60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYM324025GS-60. For precise diagrams, and layout, please refer to the original PDF.

4M x 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 • 4 194 304 words by 32-bit organized SIMM modules for PC main memory applications Fast access and cycle time 50 ns acce...

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for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 5280 mW active (HYM 324025S/GS-50) max. 4840 mW active (HYM 324025S/GS-60) CMOS – 44 mW standby TTL –88 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module with 22.

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