Datasheet4U Logo Datasheet4U.com

HYM641010GS-60 - 1M x 64-Bit Dynamic RAM Module

General Description

Note: 1 = high level ( driver output), 0 = low level ( driver output) for PDE active ( ground) .

For PDE at a high level all PD terminals are in tri-state.

Key Features

  • ad time Write.

📥 Download Datasheet

Full PDF Text Transcription for HYM641010GS-60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYM641010GS-60. For precise diagrams, and layout, please refer to the original PDF.

1M × 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Advanced Information • • 1 048 576 words by 64-bit organization Fast access and cycle time 60 ns ac...

View more extracted text
8 576 words by 64-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 9680 mW active (-60 version) max.

More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM641010GS-70 1M x 64-Bit Dynamic RAM Module
HYM641020GS-60 1M x 64-Bit Dynamic RAM Module
HYM641020GS-70 1M x 64-Bit Dynamic RAM Module
HYM64V1005GU-5 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
HYM64V1005GU-50 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
HYM64V1005GU-60 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
HYM64V1605GU-50 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
HYM64V1605GU-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
HYM64V1645GU-50 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
HYM64V1645GU-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module