HYM641010GS-60
1M × 64-Bit Dynamic RAM Module
HYM 641010GS-60/-70 HYM 641020GS-60/-70
Advanced Information
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1 048 576 words by 64-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 9680 m W active (-60 version) max. 8800 m W active (-70 version) CMOS
- 451 m W standby TTL
- 550 m W standby
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- CAS-before-RAS refresh, RAS-only-refresh Byte Write Capability 16 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL patible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs except RAS and DQ 168 pin, dual read-out, Single in-Line Memory Module Utilizes sixteen 1M × 4 -DRAMs (HYB 514400BJ/BT) and four Bi CMOS 8-bit buffers/line drivers 74ABT244 Two version : HYM 641010GS with SOJ-ponents (8.89 mm...
