HYM64V1605GU-60 Datasheet | Siemens Semiconductor Group

3.3V 16M × 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 - 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module for PC main memory applications 1 bank 16M x 64, 16M x 72 in 4k and 8k refresh organisations Optimized for byte-write non-parity or ECC applications Extended Data Out (EDO) Performance: -50 t RAC t CAC t AA t RC t HPC RAS Access Time CAS Access Time Access Time from Address Cycle Time EDO Mode Cycle Time 50 ns 13 ns 25 ns 84 ns 20 ns -60 60 ns 15 ns 30 ns 104 ns 25 ns - - - - - - - - - - - - - - - Single +3.3 V ± 0.3 V Power Supply CAS-before-RAS refresh, RAS-only-refresh Decoupling capacitors mounted on substrate All inputs, outputs and clocks are fully LV-TTL patible Serial presence detects (optional) Utilizes 16M x 4 -DRAMs in TSOPII packages 4096 refresh cycles / 64 ms with 12 / 12 addressing ( Row / Column) for HYM64/72V1605GU 8192 refresh cycles / 128 ms with 13 / 11 addressing ( Row / Column) for HYM64/72V1645GU Gold contact pads Card Size: 133,35mm x 32,00 mm x 4,00 mm This DRAM product module family is intended to be fully pin and architecture patible with the 168pin unbuffered SDRAM DIMM module family Semiconductor Group HYM 64(72)V1605/45GU-50/-60 16M x 64/72 DRAM Module The HYM64(72)V1605/45GU-50/-60 are industry standard 168-pin 8-byte Dual In-Line Memory Modules (DIMMs) which are organized as 16M x 64 and 16M x 72 high speed memory arrays designed with EDO DRAMs for non-parity and ECC applications. 4k refresh with 12 / 12 addressing and 8k refresh modules with 13 / 11 addressing are available. The DIMMs use sixteen 16M x 4 EDO DRAMs for the 16M x 64 organisation and eighteen 16M x 4 DRAMs for the 16M x 72 organisation, both in TSOPII packages. Decoupling capacitors are mounted on the PC board. The DIMMs use optional serial presence detects implemented via a serial E...